设备基本参数
Temperature Range：RT ～ 1200 °C
Maximum heating rate: 50℃/s (50～1200℃) in vacuum atmosphere
45℃/s (50～1200℃) in nitrogen gas
Temperature uniformity: ±2.0℃（ΔT=4℃）at 1200℃ in vacuum atmosphere
±4.5℃（ΔT=9℃）at 1200℃ in nitrogen gas
Maximum Sample Size：20 mm×20 mm×2 mm
Atmosphere: Air, Vacuum, Ar Gas flow
Features
?50°C/s high speed heating.
?Select the desired atmosphere from vacuum, gas, gas flow, air.
?Precise temperature control.
?Compact, table-top design.
?Simple input of temperature recipe into computer connected with USB
?Display temperature data on the PC monitor during heating
Applications
?Crystal annealing of ferroelectric thin films.
?Diffusion annealing, oxide film deposition annealing after ion implantation.
?Sintering, alloying treatment of Si and compound wafers.
?Glass substrate uniform temperature annealing.
?Thermal cycle, thermal shock, thermal fatigue testing.
?Temperature programmed desorption testing, catalytic effect testing.
